Gigahertz Transresistance Amplifiers in Fine Line NMOS

IEEE Journal of Solid-State Circuits

Volumn 19, Issue 6, 1984, Pages 986-994

  Abidi, Asad A ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIBER OPTICS - COMPONENTS; SEMICONDUCTOR DEVICES, MOS;

FINE LINE NMOS; GIGAHERTZ TRANSRESISTANCE AMPLIFIERS;

AMPLIFIERS;

EID: 0021635766     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1984.1052255     Document Type: Article

References (6)

1. M. P. Lepselter et al., “A systems approach to 1 micron NMOS,” Proc. IEEE, vol. 71, May 1983.
2. R. G. Smith and S. D. Personick, “Receiver design for optical fiber communication systems,” in Semiconductor Devices for Optical Communication. Berlin, Germany: Springer Verlag, 1980.
3. K. Iwashita et al., “Monolithic integrated amplifiers for a gigabit optical repeater,” Electron. Lett., vol. 20, no. 11, May 24, 1984.
4. D. L. Fraser et al., “A single chip NMOS preamplifier for optical fiber in Int. Solid-State Circuits Conf.,Feb. 1983.
5. K. K. Thornber, “Resistive gate induced thermal noise in IGFET's,” IEEE J. Solid-State Circuits, vol. SC-16, Aug. 1981.
6. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.