A Monolithically Integrated Detector-Preamplifier on High-Resistivity Silicon

IEEE Transactions on Nuclear Science

Volumn 37, Issue 2, 1990, Pages 463-468

  Holland, S ^a   Spieler, H ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, MONOLITHIC; RADIATION DETECTORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES;

PREAMPLIFIERS; WHITE NOISE;

AMPLIFIERS;

EID: 0025417249     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.106663     Document Type: Article

References (14)

1. V. Radeka et al, “Design of a charge sensitive preamplifier on high resistivity silicon,” IEEE Trans. Nucl. Sci., vol. 35, no. 1, p. 155, Feb. 1988.
2. V. Radeka et al, “Implanted silicon JFET on completely depleted high-resistivity devices,” IEEE Elec. Dev. Lett., vol. 10, no. 2, p. 91, Feb. 1989.
3. G. Vanstraelen, I. Debusschere, C. Claeys, and G. Declerck, “New concepts for integrated solid state detector electronics,” Nuclear Instruments and Methods in Physics Research, vol. A273, p. 625, Dec. 1988.
4. G. Vanstraelen, I. Debusschere, C. Claeys, and G. Declerck, “Fully integrated CMOS pixel detector for high energy particles,” Nuclear Instruments and Methods in Physics Research, vol. A275, no. 3, p. 574, March 1989.
5. S. Holland, “An IC-compatible detector process,” IEEE Trans. Nucl. Sci., vol. 36, no. 1, p. 282, Feb. 1989.
6. S. Holland, “Fabrication of Detectors and Transistors on High-Resistivity Silicon,” Nuclear Instruments and Methods in Physics Research, vol. A275, no. 3, p. 537, March 1989.
7. E. Gatti, P. Rehak, and J.T. Walton, “Silicon drift chambers-first first results and optimum processing of signals,” Nuclear Instruments and Methods in Physics Research, vol. A226, p. 129, Sept. 1984.
8. P. Richman, “Complementary MOS field-effect transistors on high-resistivity silicon substrates,” Solid-State Electronics, vol. 12, p. 377, May 1969.
9. P. Richman, “Modulation of space-charge-limited current flow in insulated-gate field-effect tetrodes,” IEEE Trans. Elec. Dev., vol. 16, no. 9, p. 759, Sept. 1969.
10. P.R. Gray and R.G. Meyer, Analysis and Design of Analog Integrated Circuits, 2nd edition, John Wiley and Sons, Inc., 1984.
11. T.P. Ma and P.V. Dressendorfer (editors), Ionizing Radiation Effects in MOS Devices and Circuits, John Wiley and Sons, Inc., 1989.
12. C.G. Sodini, S.S. Wong, and P.-K. Ko, “A framework to evaluate technology and device design enhancements for MOS integrated circuits,” IEEE Journal Solid-State Circuits, vol. 24, no. 1, p. 118, Feb. 1989.
13. D. Senderowicz, D.A. Hodges, and P.R. Gray, “High-performance performance NMOS operational amplifier,” IEEE Journal Solid-State Circuits, vol. 13, no. 6, p. 760, Dec. 1978.
14. Y.P. Tsividis, D.L. Fraser, Jr., and J.E. Dziak, “A process-insensitive insensitive high-performance NMOS operational amplifier,” IEEE Journal Solid-State Circuits, vol. 15, no. 6, p. 921, Dec. 1980.