A 3.3-V monolithic photodetector/CMOS-preamplifier for 531 Mb/s optical data link applications

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 1993, Pages 96-97

  Lim, P J W ^a   Tzeng, A Y C ^b   Chuang, H L ^c   St Onge, A ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

^c Essex Junction ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; PHOTONS;

CMOS PREAMPLIFIER; INTEGRATED PHOTODETECTOR; MONOLITHICALLY INTEGRATED; OPTICAL DATA LINKS; PROCESS MODIFICATIONS; PSEUDO RANDOM BIT SEQUENCES; SILICON PHOTO-DETECTOR; WAVELENGTH LASERS;

PHOTODETECTORS;

EID: 3843137591     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.1993.280069     Document Type: Conference Paper

References (2)

1. Rogers, D. L., "Monolithic Integration of a 3 GHz DetectorPreamplifier Using a Refractory-Gate, Ion-Implanted MESFET Process", Electron Device Letters, vol. EDL7, no. 11, pp. 600-602, Nov. 1986.
2. Hartman, D. H., et al., "A Monolithic Silicon Photodetector/Amplifier IC for Fiber and Integrated Optics Application", Journal of Lightwave Technology, vol. LT-3, no. 4, pp. 729-738, Aug. 1985.