Nitrogen in-situ doped poly buffer locos: simple and scalable isolation technology for deep-submicron silicon devices

IEEE Transactions on Electron Devices

Volumn 43, Issue 2, 1996, Pages 311-317

  Kobayashi, Toshio ^a   Nakayama, Satoshi ^a   Miyake, Masayasu ^a   Okazaki, Yukio ^a   Inokawa, Hiroshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; FABRICATION; LITHOGRAPHY; MORPHOLOGY; NITROGEN; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING;

DEEP SUBMICRON SILICON DEVICES; EDGE MORPHOLOGY; MICROTRENCHING; POLYSILICON GRAINS; SCALABLE ISOLATION TECHNOLOGY;

LSI CIRCUITS;

EID: 0030085689     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.481733     Document Type: Article

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