NOVEL PROCESS AND DEVICE TECHNOLOGIES FOR SUBMICRON 4MB CMOS EPROMS.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1987, Pages 556-559

  Mori, S ^a   Matsukawa, N ^a   Kaneko, Y ^a   Arai, N ^a   Shinagawa, T ^a   Suizu, Y ^a   Hosokawa, N ^a   Yoshikawa, K ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - FIXED; HEAT TREATMENT - ANNEALING; SEMICONDUCTOR DEVICES, MOS;

INTERPOLY DIELECTRICS; N-WELL CMOS TECHNOLOGY; RAPID THERMAL ANNEALING; SELF-ALIGNED CONTACT (SAC); SUBMICRON 4MB CMOS EPROMS;

DATA STORAGE, SEMICONDUCTOR;

EID: 0023569120     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1987.191486     Document Type: Conference Paper

References (9)