Flash EEPROM cell scaling based on tunnel oxide thinning limitations

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1991, Pages 79-80

  Yoshikawa, Kuniyoshi ^a   Mori, Seiichi ^a   Sakagami, Eiji ^a   Arai, Norihisa ^a   Kaneko, Yukio ^a   Ohshima, Yoichi ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE UNITS; ELECTRIC FIELDS; OXIDES; RELIABILITY;

EEPROM; TUNNEL OXIDES;

DATA STORAGE, SEMICONDUCTOR;

EID: 0026407202     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)