ONO Inter-Poly Dielectric Scaling for Nonvolatile Memory Applications

IEEE Transactions on Electron Devices

Volumn 38, Issue 2, 1991, Pages 386-391

  Mori, Seiichi ^a   Sakagami, Eiji ^a   Araki, Hitoshi ^a   Kaneko, Yukio ^a   Narita, Kazuhito ^a   Ohshima, Yoichi ^a   Yoshikawa, Kuniyoshi ^a   Arai, Norihisa ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS--APPLICATIONS; OXIDES--APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS--APPLICATIONS;

CHARGE RETENTION CHARACTERISTICS; E-I CHARACTERISTICS; ELECTRIC FIELD LEAKAGE CURRENT; NONVOLATILE MEMORIES; ONO INTER-POLY DIELECTRIC SCALING; OXIDE/NITRIDE/OXIDE (ONO);

DATA STORAGE, DIGITAL;

EID: 0026107524     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.69921     Document Type: Article

References (14)

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