Enhancement-Mode Quantum-Well Gex Si1―x PMOS

IEEE Electron Device Letters

Volumn 12, Issue 4, 1991, Pages 154-156

  Nayak, D K ^a   Woo, J C S ^a   Park, J S ^a   Wang, K L ^a   MacWilliams, K P ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM COMPOUNDS;

CHANNEL MOBILITY; ENHANCEMENT-MODE QUANTUM-WELL PMOS; P-CHANNEL QUANTUM-WELL MOSFET; SATURATION TRANSCONDUCTANCE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026138240     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.75748     Document Type: Article

References (11)

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