A Gate-Quality Dielectric System for Sige Metal-Oxide-Semiconductor Devices

IEEE Electron Device Letters

Volumn 12, Issue 5, 1991, Pages 246-248

  Warren, Alan C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICON GERMANIUM ALLOYS;

MOS CAPACITORS; PECVD;

SEMICONDUCTOR DEVICES, MOS;

EID: 0026156656     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.79571     Document Type: Article

References (16)

1. S. S. Iyer, G. L. Patton, J. M. C. Stork, B. S. Meyerson, and D. L. Harame, “Heterojunction bipolar transistors using Si-Ge alloys,” IEEE Trans. Electron Devices, vol. 36, pp. 2043–2064, 1989.
2. C. Smith and A. D. Welbourn, “Prospects for a heterostructure bipolar transistor using a silicon-germanium alloy,” in Proc. IEEE 1987 Bipolar Circuits and Technology Meeting, pp. 57–64.
3. G. L. Patton, S. S. Iyer, S. L. Delage, E. Gannin, and R. C. McIntosh, “Oxidation of strained Si-Ge layers grown by MBE,” in Mater. Res. Soc. Symp. Proc., vol. 102, 1988, pp. 295–299.
4. F. K. LeGoues, R. Rosenberg, T. Nguyen, and B. S. Meyerson, “The mechanism of oxidation of SiGe,” in Mater. Res. Soc. Symp. Proc, vol. 105, 1988, pp. 313–318.
5. J. Batey and E. Tierney, “Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor deposition,” J. Appl. Phys., vol. 60, pp. 3136–3146, 1986.
6. A. A. Bright, “He-PECVD oxides and nitrides: Process mechanisms and applications in advanced device structures,” to be published in J. Vac. Sci. Technol. A, 1991.
7. S. Tiwari, S. L. Wright, and J. Batey, “Unpinned GaAs MOS capacitors and transistors,” IEEE Electron Device Lett., vol. 9, pp. 488–490, 1988.
8. W. Kern and D. A. Puotinen, “Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology,” RCA Rev., vol. 31, pp. 187–205, 1970.
9. D. E. Aspenes and J. B. Theeten, “Optical properties of the interface between Si and its thermally grown oxide,” Phys. Rev. Lett., vol. 43, pp. 1046–1048, 1979.
10. J. F. Freeouf, “Application of spectroscopic ellipsometry to complex samples,” Appl. Phys. Lett., vol. 53, pp. 2426–2428, 1988.
11. S. S. Iyer, J. C. Tsang, M. W. Copel, P. R. Pukite, and R. M. Tromp, “Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering,” Appl. Phys. Lett., vol. 54, pp. 219–221, 1989.
12. D. J. Gravesteijn et al., “Ge segregation during molecular beam epitaxial growth of Si1-xGex layers,” Thin Solid Films, vol. 183, pp. 191–196, 1989.
13. P. Fahey, S. S. Iyer, and G. J. Scilla, “Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in Si,” Appl. Phys. Lett., vol. 54, pp. 843–845, 1989.
14. H. Kroemer, W.-Y. Chien, J. S. Harris, Jr., and D. D. Edwall, “Measurement of isotype heterojunction barriers by CV profiling,” Appl. Phys. Lett., vol. 36, pp. 295–297, 1980.
15. S. Subbanna, et al., “P-channel Si/SiGe MOSFET's,” in Proc. Symp. VLSI Technology, May 1991.
16. D. Nayak, J. C. S. Woo, J. S. Park, and K. L. Wang, “Modulation doped p-channel Si1-xGex MOSFET,” in Proc. 48th Device Res. Conf., vol. 48, 1990, p. VIA1.