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Volumn 87, Issue 5, 2000, Pages 2320-2326

Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsxP1-x/GayIn1-yP multilayers on InP(001)

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Indexed keywords


EID: 0013451174     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372181     Document Type: Article
Times cited : (3)

References (46)
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    • Madelung, O.1
  • 40
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    • Optical and structural properties of InAsP/In(Ga)P multilayers on InP(001): Multipple quantum well structures and devices
    • edited by M. O. Manasreh Gordon and Breach, New York
    • M. Beaudoin, P. Desjardins, R. Y.-F. Yip, and R. A. Masut, "Optical and structural properties of InAsP/In(Ga)P multilayers on InP(001): Multipple quantum well structures and devices," in InP and Related Compounds, edited by M. O. Manasreh (Gordon and Breach, New York, 1999), pp. 381-458.
    • (1999) InP and Related Compounds , pp. 381-458
    • Beaudoin, M.1    Desjardins, P.2    Yip, Y.-F.3    Masut, R.A.4
  • 41
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    • edited by H. Ehrenreich and D. Turnbull Academic, San Diego
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  • 43
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    • and Ref. 9 that the splitting of the fundamental heavy-hole (HH) and light-hole (LH) energy peaks in this system serves as an effective primary key for determining the band offset
    • It has been noted elsewhere [R. P. Schneider, Jr. and B. W. Wessels, J. Electron. Mater. 20, 1117 (1991) and Ref. 9] that the splitting of the fundamental heavy-hole (HH) and light-hole (LH) energy peaks in this system serves as an effective primary key for determining the band offset.
    • (1991) J. Electron. Mater. , vol.20 , pp. 1117
    • Schneider R.P., Jr.1    Wessels, B.W.2
  • 44
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    • Heterojunction band discontinuities
    • edited by F. Capasso and G. Margaritondo Elsevier, Amsterdam
    • J. Tersoff, in Heterojunction Band Discontinuities, Physics and Device Applications, edited by F. Capasso and G. Margaritondo (Elsevier, Amsterdam, 1987), p. 3.
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    • Tersoff, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.