Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1377-1380

  Kuo, H C ^a   Thomas, S ^a   Norton, T U ^a   Moser, B G ^a   Stillman, G E ^a   Lin, C H ^a   Chen, H ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11744282956     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590079     Document Type: Article

References (10)

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