메뉴 건너뛰기




Volumn 80, Issue 2, 1996, Pages 846-852

Structural and optical properties of strain-relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0039368903     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362921     Document Type: Article
Times cited : (15)

References (39)
  • 14
    • 0022722288 scopus 로고
    • E. Yablonovitch and E.O. Kane, J. Lightwave Technol. LT-4, 504 (1986); LT-4, 961 (1986).
    • (1986) J. Lightwave Technol. , vol.LT-4 , pp. 961
  • 18
    • 4143078533 scopus 로고
    • J.W. Matthews and A.E. Blakeslee, J. Cryst. Growth 27, 118 (1974); 32, 265 (1976).
    • (1976) J. Cryst. Growth , vol.32 , pp. 265
  • 20
    • 85033837364 scopus 로고    scopus 로고
    • note
    • c2 .
  • 24
    • 0000902066 scopus 로고
    • G.E. Pikus and G.L. Bir, Sov. Phys. Solid State 1, 136 (1959); 1, 1502 (1960).
    • (1960) Sov. Phys. Solid State , vol.1 , pp. 1502
  • 32
    • 85033858110 scopus 로고    scopus 로고
    • note
    • ⊥_values and indicated some anisotropy in the relaxation with respect to 〈110〉 directions. The largest relaxation anisotropy has been measured for sample Modu102 where R=11% and 23% for two orthogonal directions. The average relaxation has been used for the analysis of the optical data.
  • 33
    • 85033837259 scopus 로고    scopus 로고
    • note
    • avg.
  • 37
    • 85033837928 scopus 로고    scopus 로고
    • note
    • The exciton binding energies can be calculated by the variational approach [Ref. 23]. In the simple hydrogenic model, light- and heavy-hole excitons would have energies of 0.7 meV and 1.4 meV, respectively, in bulk InAs. These values are respectively 4.2 meV and 6.2 meV in bulk InP and lie in between for the InAsP alloys. For finite quantum wells, the exciton energies should lie somewhere between the bulk values and the infinite well limit for which the two-dimensional (2D) Rydberg is four times the three-dimensionnal (3D) Rydberg. For example, in the GaAs/AlGaAs system, one finds an effective Rydberg of about 1.5 times the bulk value for wells less than 10 nm in thickness [Ref. 23]. This is in excellent agreement with our findings (Table I) and justifies our use of the less rigourous treatment which still preserves all of the essential physics.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.