Low temperature polycrystalline silicon thin film transistor with silicon nitride ion stopper

IEEE Electron Device Letters

Volumn 17, Issue 6, 1996, Pages 258-260

  Lee, Kyung Ha ^a   Jhon, Young Min ^b   Cha, Hyuk Jin ^a   Jang, Jin ^a,c  

^a Kyung Hee University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; EXCIMER LASERS; GATES (TRANSISTOR); LEAKAGE CURRENTS; NITRIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

DRAIN VOLTAGE; FIELD EFFECT MOBILITY; GATE INSULATOR; ION DOPING; LASER ANNEALING; ON OFF CURRENT RATIO; POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS; SILICON NITRIDE ION STOPPER; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 0030166754     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.496450     Document Type: Article

References (11)

1. Y. Miyata, M. Furuta, T. Yoshioka, and T. Kawamura, "Low temperature polycrystalline silicon thin film transistors for large-area liquid crystal display," J. Appl. Phys., vol. 31, pp. 4559-4562, 1993.
2. T. Sameshima, S. Usui, and M. Sekiya, "XeCl excimer laser annealing used in the fabrication of poly-Si TFT's." IEEE Electron Device Lett., EDL-7. pp. 276-278, 1986.
3. T. Sameshima, A. Kohno, M. Sekiya, M. Hara, and N. Sano, "Improvement of gate-insulator/silicon interface characteristics in amorphous silicon thin film transistors," Jpn. J. Appl. Phys., vol. 36, pp. L834-836, 1994.
4. S. D. Brotherton, D. J. McCulloch, J. B. Clegg, and J. P. Gowers, "Excimer-laser-annealed poly-Si thin film transistors," IEEE Trans. Electron Devices, vol. 40. pp. 407-413, 1993.
5. K. Shimizu, O. Sugiura, and M. Malsumura, "High-mobility poly-Si thin film transistors fabricated by a novel excimer laser crystallization method," IEEE Trans. Electron Devices, vol. 40, pp. 112-117, 1993.
6. A. Kohno, T. Sameshima, N. Sano, M. Sekiya, and M. Hara, "High performance poly-Si TFT's fabricated using pulsed laser annealing and remote plasma CVD with low temperature processing," IEEE Trans. Electron Devices, vol. 42, pp. 251-257, 1995.
7. Y. Yoshida, K. Setsune, and T. Hirao, "Phosphorus doping for hydrogenated amorphous silicon films by a low-energy ion doping technique," Appl. Phys. Lett., vol. 51, pp. 253-255, 1987.
8. Y. M. Jhon, D. H. Kim, H. Chu, and S. S. Choi, "Crystallization of amorphous silicon by excimer laser annealing with a line shape beam having a Gaussian profile," Jpn. J. Appl. Phys., vol. 33, pp. L1438-L1441, 1994.
9. J. M. Jun, S. S. Yoo, J. I. Woo, K. H. Lee, H. K. Kang, K. N. Kim, and J. Jang, "Silicon thin film transistors using an ion-shower technique," J. Korea Phys. Soc., vol. 26, pp. S95-S98, 1993.
10. M. Yazaki, S. Takenaka, and H. Oshima, "Conduction mechanism of leakage current observed in metal-oxide-semiconductor transistors and poly-Si thin-film transistors," Jpn. J. Appl. Phys., vol. 31, pp. 206-209, 1992.
11. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, pp. 446-448.