Low temperature process for strontium bismuth tantalate thin films

Integrated Ferroelectrics

Volumn 30, Issue 1-4, 2000, Pages 1-8

  Celinska, J ^a   Joshi, V ^a   Narayan, S ^a   McMillan, L D ^a   De Araujo, C A P ^a  

^a Symetrix Corporation   (United States)

Author keywords

CSD; FeRAM; Ferroelectric films; SBT

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; FERROELECTRICITY; LOW TEMPERATURE EFFECTS; RANDOM ACCESS STORAGE; STOICHIOMETRY; STRONTIUM COMPOUNDS; THERMODYNAMIC PROPERTIES; THICKNESS MEASUREMENT;

RAMP RATES; STRONTIUM BISMUTH TANTALATE; THERMAL BUDGET;

FERROELECTRIC THIN FILMS;

EID: 0034446423     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584580008222247     Document Type: Conference Paper

References (0)