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Volumn 61, Issue 8, 2000, Pages 5416-5422

Existence of localized interface states in metal/GaAs(100) junctions: Au versus Al contacts

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EID: 0012654105     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.5416     Document Type: Article
Times cited : (5)

References (37)
  • 17
  • 31
    • 0000736726 scopus 로고
    • C.-L. Fu and K.-M. Ho, Phys. Rev. B 28, 5480 (1983).
    • (1983) Phys. Rev. B , vol.28 , pp. 5480
  • 33
    • 35949017177 scopus 로고
    • In the bulk metal, the number of electrons per atom in the semilocalized d orbitals has been estimated as (Formula presented) [see, e.g., J. W. Davenport, R. E. Watson, and M. Weinert, Phys. Rev. B 32, 4883 (1985)].
    • (1985) Phys. Rev. B , vol.32 , pp. 4883
    • Davenport, J.1    Watson, R.2    Weinert, M.3
  • 36
    • 0001047105 scopus 로고
    • For the GaAs(110) surface, e.g., it is known that the unrelaxed surface exhibits surface states within the fundamental band gap that disappear upon relaxation [see, e.g., J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B 20, 4150 (1979)].
    • (1979) Phys. Rev. B , vol.20 , pp. 4150
    • Chelikowsky, J.1    Cohen, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.