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Volumn 143, Issue 3-4, 1994, Pages 129-134
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Lateral p-n junctions containing p-type (311)A facets in nonplanar metalorganic vapor phase epitaxy of AlGaAs lasers
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Author keywords
[No Author keywords available]
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Indexed keywords
CARBON;
ELECTRIC CURRENT MEASUREMENT;
EPITAXIAL GROWTH;
FILM GROWTH;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING FILMS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING SELENIUM;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR JUNCTIONS;
SEMICONDUCTOR LASERS;
SUBSTRATES;
ALUMINUM GALLIUM ARSENIDE LASERS;
NONPLANAR METALORGANIC VAPOR PHASE EPITAXY;
SEMICONDUCTOR GROWTH;
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EID: 0028761607
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(94)90047-7 Document Type: Article |
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Times cited : (5)
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References (16)
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