Single event transient (SET) sensitivity of Advanced BiCMOS Technology (ABT) buffers and transceivers

IEEE Radiation Effects Data Workshop

Volumn 2002-January, Issue , 2002, Pages 67-74

  Koga, R ^a   Yu, P ^a   Crain, S ^a   Crawford, K ^a   Chao, K ^b  

^a AEROSPACE CORPORATION   (United States)

^b JHU/APL   (United States)

Author keywords

BiCMOS integrated circuits; Chaos; Electrostatic discharge; Impedance; Power supplies; Protection; Telephony; Testing; Transceivers; Voltage

Indexed keywords

BICMOS TECHNOLOGY; CHAOS THEORY; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; HEAVY IONS; HIGH ELECTRON MOBILITY TRANSISTORS; RADIATION EFFECTS; RADIATION HARDENING; SENSITIVITY ANALYSIS; TESTING; TRANSCEIVERS;

BICMOS INTEGRATED CIRCUITS; POWER SUPPLY; PROTECTION; SINGLE EVENT LATCH-UP; SINGLE EVENT TRANSIENTS; TELEPHONY; TEST SAMPLES;

TRANSIENTS;

EID: 0012508691     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/REDW.2002.1045535     Document Type: Conference Paper

References (4)

1. M.V. O'Bryan, et al., "Radiation Damage and Single Event Effect Results for Candidate Spacecraft Electronics," IEEE NSREC Data Workshop Record, pp106-122, 2000.
2. K. Warren, et al., "Single Event Latchup and Total Dose Testing of Spacecraft Electronic Components," IEEE NSREC Data Workshop Record, pp100-105, 2001.
3. J. Coss, "Device Susceptibility Update: 1999-2000," IEEE NSREC Data Workshop Record, pp106-126, 2001.
4. R. Koga, "Single-event Effect Ground Test Issues," IEEE Trans. Nucl. Sci.,43, pp661-670, 1996.