AFM investigation of selective etching mechanism of nanostructured silica

Surface Science

Volumn 482-485, Issue PART 2, 2001, Pages 1319-1324

  Bukharaev, A A ^a   Nurgazizov, N I ^a   Mozhanova, A A ^a   Ovchinnikov, D V ^a  

^a ZAVOISKY PHYSICAL TECHNICAL INSTITUTE   (Russian Federation)

Author keywords

Atomic force microscopy; Computer simulations; Etching; Ion bombardment; Silicon oxides; Solid liquid interfaces; Surface structure, morphology, roughness, and topography

Indexed keywords

EID: 0012375670     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)00782-8     Document Type: Article

References (7)

1. D.W. Britt, V. Hlady, Langmur 13 (1997) 1873.
2. A.A. Bukharaev, N.I. Nurgazizov, A.A. Mozhanova, D.V. Ovchinnikov, Russian Microelectr. 28 (1999) 330.
3. A.A. Bukharaev, A.V. Kazakov, R.A. Manapov, I.B. Khaibullin, Sov. Phys. Solid State 33 (1991) 578.
4. A.A. Bukharaev, N.V. Berdunov, D.V. Ovchinninkov, K.M. Salikhov, Russian Microelectr. 26 (1997) 137.
5. P. Markiewicz, S.R. Cohen, A. Efimov, D.V. Ovichinnikov, A.A. Bukharaev, Probe Microsc. 1 (1999) 355.
6. V. Bykov, A. Gologanov, V. Shevyakov, Appl. Phys. A 66 (1998) 499.
7. T. Kobayashi, A. Nakanishi, K. Fukumura, J. Radioanal. Nucl. Chem. 239 (1999) 313.