In situ Atomic Force Microscopy Investigation into the Kinetics of Wet Etching of Submicron Silicon Dioxide Films

Russian Microelectronics

Volumn 28, Issue 5, 1999, Pages 330-338

  Bukharaev, A A ^a   Nurgazizov, N I ^a   Mozhanova, A A ^a   Ovchinnikov, D V ^a  

^a Russian Academy of Sciences   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345310514     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (20)

1. Sangwal, K., Etching of Crystals: Theory, Experiment, and Application, Amsterdam: Elsevier, 1987. Translated under the title Travlenie kristallov. Teoriya, eksperiment, Moscow: Mir, 1990.
2. Sangwal, K., Etching of Crystals: Theory, Experiment, and Application, Amsterdam: Elsevier, 1987. Translated under the title Travlenie kristallov. Teoriya, eksperiment, Moscow: Mir, 1990.
3. Pichugin, I.G. and Tairov, Yu.P., Tekhnologiya poluprovodnikovykh priborov (Technology of Semiconductor Devices), Moscow: Vysshaya Shkola, 1984.
4. Stepanenko, I.R, Osnovy mikroelektroniki (The Basics of Microelectronics), Moscow: Sovetskoe Radio, 1980.
5. Travlenie poluprovodnikov (Etching of Semiconductors: Collection of Articles), Moscow: Mir, 1965.
6. Valiev, K.A., Danilov, V.A., Drakin, K.A., Peshekhonov, S.V., and Rakov, A.V., Physical Processes Underlying Defect Formation and Etching in Ion Lithography Applied to Silicon Dioxide, Mikroelektronika, 1982, vol. 11, no. 4, pp. 323-328.
7. Valiev, K.A., Makhvalidze, T.M., and Rakov, A.V., Kinetics of Resist-Free Ion Lithography, Mikroelektronika, 1986, vol. 15, no. 5, pp. 392-397.
8. Arutyunov, P.A. and Tolstikhina, A.L., Scanning Probe (Tunneling and Force) Microscopy in Metrological Problems of Nanoelectronics, Mikroelektronika, 1997, vol. 26, no. 6, pp. 426-439.
9. Bukharaev, A.A., Berdunov, N.V., Ovchinnikov, D.V., and Salikhov, K.M., Atomic Force Microscopy for Metrology of Micro- and Nanostructures, Mikroelektronika, 1997, vol. 26, no. 3, pp. 163-175.
10. Bykov, V.A., Lazarev, M.I., and Saunin, S.A., Scanning Probe Microscopy for Science and Industry, Elektronika: Nauka Technol. Biznes, 1997, no. 5, pp. 7-14.
11. Bukharaev, A.A., Ovchinnikov, D.V, and Bukharaeva, A.A., Surface Diagnostics Using Scanning Force Microscopy: A Review, Zavod. Lab., 1997, no. 5, pp. 10-27.
12. Magonov, S. N., Scanning Force Microscopy for Polymers and Related Materials, Vysokomol. Soedin., Ser. B, 1996, vol. 38, no. 1, pp. 143-182.
13. 2-Si Structures, Pis'ma Zh. Tekh. Fiz., 1998, vol. 24, no. 21, pp. 81-86.
14. Arnold, G.W., Ion Implantation Effects in Glasses, Rad. Eff., 1982, no. 65, pp. 17-30.
15. Bukharaev, A.A., Mozhanova, A.A., and Nurgazizov, N.I., In Situ Study of Photochemical Proceses at the Liquid-Semiconductor Interface by Atomic Force Microscopy, Tr. Vserossiiskogo soveshchaniya "Zondovaya mikroskopiya-99" (Proc. All-Russia Conf. "Probe Microscopy-99"), Nizhni Novgorod, 1999, pp. 85-90.
16. Pleskov, Yu.V. and Gurevich, Yu.Ya., Fotoelektrokhimiya poluprovodnikov (Photoelectrochemistry of Semiconductors), Moscow: Nauka, 1983.
17. Bukharaev, A.A., Bukharaeva, A.A., and Nurgazizov, N.I., In situ Atomic Force Microscopy for Chemical Etching of Irradiated Silicon Dioxide in HF Solution, Tr. Vserossiiskogo soveshchaniya "Zondovaya mikroskopiya-98" (Proc. All-Russia Conf. "Probe Microscopy-98"), Nizhni Novgorod, 1998, pp. 138-144.
18. Manara, A., Antonini, M., Camagni, P., and Gibson, P.N., Radiation Damage in Silica-Based Glasses: Point Defects, Microstructural Changes, and Possible Implications on Etching and Leaching, Nucl. Instrum. Methods Phys. Res., Sect. B, 1984, pp. 475-480.
19. Ziegler, J.F., Biersack, J.P., and Littmark, U., The Stopping and Range of Ions in Solids, Pergamon, New York, 1985.
20. x Layers, Phys. Status Solidi A, 1980, vol. 62, pp. K169-K174.