Recombination characteristics of minority carriers near the AlxOy/GaAs interface using the light beam induced current technique

Applied Physics Letters

Volumn 71, Issue 26, 1997, Pages 3865-3867

  Gebretsadik, H ^a   Zhang, K ^a   Kamath, K ^a   Zhang, X ^a   Bhattacharya, P ^a  

^a The Department of Civil and Environmental Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012365309     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120545     Document Type: Article

References (20)

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