Wet oxidation of AlGaAs vs. AlAs: A little gallium is good

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 1996, Pages 390-391

  Choquette, Kent D ^a   Geib, K M ^a   Hull, Robert ^a   Hou, H Q ^a   Lear, K L ^a   Chui, H C ^a   Hammons, B E ^a   Nevers, J A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ANNEALING; COMPOSITION EFFECTS; INTERFACES (MATERIALS); OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

MECHANICAL STABILITY; OXIDATION ISOTROPY; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSELS); WET OXIDATION;

OXIDES;

EID: 0030406908     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)