Optical Control of Group-III and N Flux Intensities in Plasma-Assisted MBE with RF Capacitively-Coupled Magnetron Nitrogen Activator

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 2, 2001, Pages 615-619

  Jmerik, V N ^a   Vekshin, V A ^a   Davydov, V Yu ^a   Ratnikov, V V ^a   Tkachman, M G ^a   Shubina, T V ^a   Ivanov, S V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012224344     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200112)188:2<615::AID-PSSA615>3.0.CO;2-J     Document Type: Article

References (12)

1. B. HEYING, R. AVERBECK, L. F. CHEN, E. HAUS, H. RIECHERT, and J. S. SPECK, J. Appl. Phys. 88, 1855 (2000).
2. V. N. JMERIK, V. V. MAMUTIN, V. A. VEKSHIN, T. V. SHUBINA, S. V. IVANOV, and P. S. KOPEV, Mater. Sci. Eng. B 59, 60 (1999).
3. V. N. JMERIK, V. V. MAMUTIN, T. V. SHUBINA, M. G. TKACHMAN, V. A. VEKSHIN, V. V. RATNIKOV, A. V. LEBEDEV, S. V. IVANOV, and P. S. KOPEV, in: Proc. 8th Internat. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, June 19-23, 2000 (p. 125).
4. V. V. MAMUTIN, V. A. VEKSHIN, V. YU. DAVYDOV, V. V. RATNIKOV, T. V. SHUBINA, S. V. IVANOV, P. S. KOPEV, M. KARLSTEEN, U. SODERWALL, and M. WILLANDER, in: Proc. 3rd Internat. Conf. Nitride Semiconductors, Montpellier, France, July 5-9, 1999; phys. stat. sol. (a) 176, 247 (1999).
5. V. V. MAMUTIN, V. A. VEKSHIN, V. YU. DAVYDOV, V. V. RATNIKOV, T. V. SHUBINA, S. V. IVANOV, P. S. KOPEV, M. KARLSTEEN, U. SODERWALL, and M. WILLANDER, in: Proc. 3rd Internat. Conf. Nitride Semiconductors, Montpellier, France, July 5-9, 1999; phys. stat. sol. (a) 176, 247 (1999).
6. A. N. ZAIDEL, V. K. PROKOFEV, S. M. RAISKYI, V. A. SLAVNII, and E. YA. SHREIDER, Tables of Spectral Lines, Izd, Nauka, Moscow 1969 (in Russian).
7. V. N. JMERIK, V. A. VEKSHIN, V. YU. DAVYDOV, V. V. RATNIKOV, M. G. TKACHMAN, T. V. SHUBINA, and S. V. IVANOV, Semiconductors, to be published.
8. E. J. TARSA, B. HEYING, X. H. WU, P. FINI, S. P. DENBAARS, and J. S. SPECK, J. Appl. Phys. 82, 5472 (1997).
9. B. MONEMAR, J. P. BERGMAN, and I. A. BUYANOVA, in: GaN and Related Materials, Ed. S. J. PEARTON, Gordon & Breach, New York 1997 (pp. 85-139).
10. A. R. SMITH, V. RAMACHANDRAN, R. M. FEENSTRA, D. W. GREVE, A. PTAK, T. MYERS, W. SARNEY, L. SALAMANCA-RIBA, M. SHIN, and M. SKOWRONSKI, MRS Internet J. Nitride Semicond. Res. 3, 12 (1998).
11. A. R. SMITH, R. M. FEENSTRA, D. W. GREVE, M. SHIN, M. SKOWRONSKI, J. NEUGEBAUER, and J. E. NORTHRUP, Appl. Phys. Lett. 72, 2114 (1998).
12. X. Q. SHEN, T. IDE, S. H. CHO, M. SHIMUZU, S. HARA, H. OKUMURA, S. SONODA, and S. SHIMUZU, J. Cryst. Growth 218, 155 (2000).