TEM study of Mg-doped bulk GaN crystals

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 363-368

  Liliental Weber, Z ^a   Benamara, M ^a   Ruvimov, S ^a   Mazur, J H ^a   Washburn, J ^a   Grzegory, I ^b   Porowski, S ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALS; ELECTRIC PROPERTIES; HYDROSTATIC PRESSURE; MAGNESIUM; MORPHOLOGY; NITROGEN; STACKING FAULTS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT DISTRIBUTION; HIGH ENERGY STACKING FAULTS; POLARITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033356071     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-363     Document Type: Conference Paper

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