Characteristics of Mg-doped GaN grown by metallorganic chemical vapor deposition

Journal of the Electrochemical Society

Volumn 144, Issue 8, 1997, Pages

  Eiting, C J ^a   Grudowski, P A ^a   Park, J ^a   Lambert, D J H ^a   Shelton, B S ^a   Dupuis, R D ^a,b  

^a The University of Texas at Austin   (United States)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE CARRIERS; COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031212886     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837862     Document Type: Article

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