Nanoscale compositional fluctuations in multiple inGaAs/GaAs quantum wires

Journal of Applied Physics

Volumn 87, Issue 5, 2000, Pages 2261-2264

  Catalano, M ^a   Taurino, A ^a   Lomascolo, M ^a   Vasanelli, L ^a   De Giorgi, M ^b   Passaseo, A ^b   Rinaldi, R ^b   Cingolani, R ^b   Mauritz, O ^c   Goldoni, G ^c   Rossi, F ^c   Molinari, E ^c   Crozier, P ^d  

^a CNR   (Italy)

^b INFM   (Italy)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011933305     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372170     Document Type: Article

References (10)

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7. M. DeVittorio et al. Solid State Commun. 112, 55 (1999).
8. A. Passaseo, M. Longo, R. Rinaldi, R. Cingolani, A. Taurino, M. Catalano, and L. Vasanelli, J. Cryst. Growth 197, 777 (1999).
9. R. Rinaldi, P. V. Giugno, R. Cingolani, F. Rossi, E. Molinari, U. Marti, and F. K. Reinhart, Phys. Rev. B 53, 13710 (1996).
10. In the inset, energy zero corresponds to the ground level of the quantum wires. This is because the wires grown with variable III-V ratio and without In precipitates have slightly different average In content (though with identical profile), resulting in a rigid shift of the ground level.