Recombination in InGaAs/GaAs quantum wire lasers

Solid State Communications

Volumn 112, Issue 1, 1999, Pages 55-60

  Devittorio, M ^a   Rinaldi, R ^a   Passaseo, A ^a   Degiorgi, M ^a   Lomascolo, M ^a   Visconti, P ^a   Cingolani, R ^a   Taurino, A ^b   Catalano, M ^b   Decaro, L ^c   Tapfer, L ^c  

^a Ist Naz Fis Della Materia U   (Italy)

^b CNR   (Italy)

^c Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; ELECTROLUMINESCENCE; EXCITONS; MAGNETIC FIELD EFFECTS; NANOSTRUCTURED MATERIALS; PIEZOELECTRICITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WIRES; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRICAL INJECTION; FREE CARRIER RECOMBINATION; INJECTION DENSITY; QUANTUM WIRE LASERS;

SEMICONDUCTOR LASERS;

EID: 0032592860     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00234-3     Document Type: Article

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