Influence of different V-grooved GaAs substrates on the geometrical shape of InGaAs/GaAs quantum wires

Journal of Crystal Growth

Volumn 197, Issue 4, 1999, Pages 777-782

  Passaseo, A ^a   Longo, M ^a   Rinaldi, R ^a   Cingolani, R ^a   Catalano, M ^b   Taurino, A ^b   Vasanelli, L ^b  

^a INFM   (Italy)

^b CNR   (Italy)

Author keywords

InGaAs GaAs; MOVPE; Quantum wires

Indexed keywords

CRYSTAL ORIENTATION; HIGH RESOLUTION ELECTRON MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

LOW PRESSURE METALLORGANIC VAPOR PHASE EPITAXY;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0033100915     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00887-2     Document Type: Article

References (8)

1. E. Kapon, Semiconductors Semimetals 40 (1994) 259, and references therein.
2. H. Zhao, K. Uppal, M.H. MacDougal, P.D. Dapkus, H. Lin, D.H. Rich, J. Crystal Growth 145 (1994) 824.
3. D.J. Arent, S. Nilsson, Y.D. Galeuchet, H.P. Meier, W. Walter, Appl. Phys. Lett. 55 (1989) 2611.
4. R. Rinaldi, A. Passaseo, M. De Giorgi, C. Turco, M. De Vittorio, D. Cannoletta, R. Cingolani, Solid State Electron. 42 (1998) 1239.
5. R. Cingolani, F. Sogawa, Y. Arakawa, R. Rinaldi, M. De Vittorio, A. Passaseo, A. Taurino, M. Catalano, L. Vasanelli, Phys. Rev. Lett. B 58 (1998) 1962.
6. A. Gustafsson, F. Reinhardt, G. Biasol, E. Kapon, Appl. Phys. Lett. 67 (1995) 3673.
7. T. Sogawa, S. Ando, H. Kanbe, Appl. Phys. Lett. 64 (1994) 3299.
8. M. De Giorgi, R. Rinaldi, R. Cingolani, unpublished.