Improved simulation of photoresists using new development models

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 401-416

  Dammel, Ralph R ^a   Sagan, John P ^a   Kokinda, Elaine ^a   Eilbeck, Neville ^a   Mack, Chris A ^b   Arthur, Graham G ^c   Henderson, Clifford L ^d   Scheer, Steven A ^d   Rathsack, Benjamen M ^d   Willson, C Grant ^d  

^a CLARIANT CORPORATION   (United States)

^b KLA Tencor Austin   (United States)

^c RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^d The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDIC RESINS; ALKALINE DEVELOPERS; CONCENTRATION DEPENDENCES; CRITICAL CONCENTRATIONS; DEVELOPMENT RATES; DISSOLUTION RATES; LINEAR FUNCTIONS; NEW DEVELOPMENT; PHYSICAL PHENOMENON; POSITIVE-TONE RESISTS; RESIST SYSTEMS; SELECTIVE DISSOLUTIONS; SURFACE AREAS; TWO COMPONENTS;

CONCENTRATION (PROCESS); LEACHING; PHOTORESISTORS; RESINS; SURFACE CHEMISTRY; SURFACE TREATMENT;

DISSOLUTION;

EID: 0011085743     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312399     Document Type: Conference Paper

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