Electrical properties of extremely low doped GaSb Schottky diodes

Journal of Applied Physics

Volumn 84, Issue 3, 1998, Pages 1426-1429

  Mason, Whitney ^a   Waterman, J R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010730746     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368177     Document Type: Article

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