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Volumn 69, Issue 13, 1996, Pages 1891-1893
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Characterizations of deep levels in SnTe-doped GaSb by admittance spectroscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0042565947
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.117468 Document Type: Article |
Times cited : (7)
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References (11)
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