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Volumn 69, Issue 13, 1996, Pages 1891-1893

Characterizations of deep levels in SnTe-doped GaSb by admittance spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0042565947     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117468     Document Type: Article
Times cited : (7)

References (11)
  • 4
    • 0026413134 scopus 로고
    • J. F. Chen and A. Y. Cho, J. Cryst. Growth 111, 619 (1991); J. Electron. Mater. 22, 259 (1993).
    • (1993) J. Electron. Mater. , vol.22 , pp. 259


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.