Influence of Ge-profile design and saturation effects on SiGe HBT linearity

European Solid-State Device Research Conference

Volumn , Issue , 2001, Pages 451-454

  Malm, B Gunnar ^a   Östling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

SATURATION EFFECTS; SIGE HBTS;

EID: 0009955756     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2001.195298     Document Type: Conference Paper

References (6)

1. G. Niu, J. D. Cressler, W. E. Ansley, C. S. Webster, R. B. Anna, and N. King, "Intermodulation Characteristics of UHV/CVD SiGe HBT's," Proceedings of BCTM, pp. 50-53, 1999.
2. G. Niu, S. Zhang, J D Cressler, A. J. Joseph, J. S. Fairbanks, L. E. Larson, C. S. Webster, W. E. Ansley, and D. L. Harame, "Noise modeling and SiGe profile design tradeoffs for RF applications," IEEE Trans. Electron Devices, vol. 47, pp. 2037-2044, 2000.
3. M. Schröter, D. R. Pehlke, and T.-Y. Lee, "Compact Modeling of High-Frequency Distortion in Silicon Integrated Bipolar Transistors," IEEE Trans. Electron Devices, vol. 47, pp. 1529-1535, 2000.
4. L. C. N. de Vreede, H. C. de Graaf, K. Mouthaan, M. de Kok, J. L. Tauritz, and R. F. Baets, "Advanced Modeling of Distortion Effects in Bipolar Transistors Using the Mextram Model," IEEE Journal on Solid-State Circuits, vol. 31, pp. 114-121, 1996.
5. B. G. Malm, J. V. Grahn, and M. Ostling, "Influence of Transient Enhanced Diffusion of the Intrinsic Base Dopant Profile on SiGe HBT DC and HF Characteristics," Solid State Electronics, vol. 44, pp. 1747-1752, 2000.
6. A. J. Joseph, J. D. Cressler, D. M. Richey, and G. Niu, "Optimization of SiGe HBT's for Operation at High Current Densities," IEEE Trans. Electron Devices, vol. 46, pp. 1347-1354, 1999.