Band structure evolution in InAs overlayers on GaAs(110)

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 608-614

  He, Z Q ^a   Liver, L ^a   Kanski, J ^a   Nilsson, P O ^a   Songsiriritthigul, P ^a   Holmen G ^a   Karlsson, U O ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOEMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SPECTRUM ANALYSIS; THICKNESS MEASUREMENT;

OVERLAYERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030233658     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00210-3     Document Type: Article

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