Birefringence analysis improves 157-nm lithography optics

Laser Focus World

Volumn 36, Issue 11, 2000, Pages

  Wang, Baoliang ^a   Bates, Keith ^b  

^a Hinds Instruments Incorporated   (United States)

^b MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009559770     PISSN: 10438092     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (6)

1. T. M. Bloomstein et al., J. Vac. Sci. Technol. B 16, 3154 (1998).
2. M. Rothschild et al., J. Vac. Sci. Technol. B 17, 3262 (1999).
3. K. Orvek et al., paper presented at 157-nm Lithography Workshop, Litchfield, AZ, International SEMATECH (Feb. 15-17, 1999).
4. D. Williamson and D. Satish, US pat. #5212593 (1993).
5. J. A. McClay and A. S. L. McIntyre, Solid State Tech., 57 (June 1999).
6. B. L. Wang and T. C. Oakberg, Rev. Sci. Instrum. 70, 3847 (1999).