Photostimulated emission of GaN layers and devices

Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 264-267

  O'Donnell, K P ^a   Umlauff, M ^b   Kraushaar, M ^b   Kalt, H ^b   Briot, O ^c  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b UNIVERSITY OF KARLSRUHE   (Germany)

^c UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

Edge emitted light; Photoexcitation densities; Photostimulated emission

Indexed keywords

LIGHT EMITTING DIODES; PHOTOEMISSION; PHOTONS; SEMICONDUCTING FILMS;

GALLIUM NITRIDE; PHOTOSTIMULATED EMISSION (PSE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0009309546     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00188-8     Document Type: Article

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