Photoluminescence and optical gain in highly excited GaN

Journal of Luminescence

Volumn 72-74, Issue , 1997, Pages 59-61

  Eckey, L ^a   Hoist, J ^a   Hoffmann, A ^a   Broser, I ^a   Amano, H ^b   Akasaki, I ^b   Detchprohm, T ^c   Hiramatsu, K ^c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b MEIJO UNIVERSITY   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

Gan; High density excitation; Photoluminescence; Stimulated emission

Indexed keywords

EPITAXIAL GROWTH; EXCITONS; LIGHT EMISSION; LIGHT SCATTERING; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

BIEXCITON ANNIHILATION; EXCITON EXCITON SCATTERING; GALLIUM NITRIDE; HIGH DENSITY EXCITATION; OPTICAL GAIN; STIMULATED EMISSION;

PHOTOLUMINESCENCE;

EID: 0031163727     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(97)00215-9     Document Type: Article

References (5)

1. L. Eckey, L. Podlowski, A. Göldner, A. Hoffmann, I. Broser, B.K. Meyer, D. Volm, K. Hiramatsu, K.T. Detchprohm, H. Amano and I. Akasaki, Proc ICSCRM 95, Kyoto, Japan, Inst. Phys. Conf. Ser No. 142 (1995) p. 943.
2. L. Eckey, L. Podlowski, A. Göldner, A. Hoffmann, I. Broser, B.K. Meyer, D. Volm, K. Hiramatsu, K.T. Detchprohm, H. Amano and I. Akasaki, Proc ICSCRM 95, Kyoto, Japan, Inst. Phys. Conf. Ser No. 142 (1995) p. 943.
3. C. Klingshirn and H. Haug, Phys. Rep. (Rev. Section Phys. Lett.) 70 (1981) 315, and references therein.
4. C. Benoit à la Guillaume, J.M. Debever and F. Salvan, Phys. Rev. 177 (1969) 567.
5. K.L. Shaklee, R.E. Nahory and R.F. Leheny, J. Lumin. 7 (1973) 284-309