Crystal texture and electromigration damage in Al-based interconnect lines studied by ACOM with the SEM

Materials Science Forum

Volumn 273-275, Issue , 1998, Pages 573-578

  Lepper, M ^a   Von Glasow, A ^b   Piscevic, D ^b   Schwarzer, R A ^a  

^a CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

ACOM; Aggregate Function; Aluminum; BKD; EBSD; Electromigration; Thin Films

Indexed keywords

BACKSCATTERING; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; ELECTROMIGRATION; ELECTRON DIFFRACTION; MICROELECTRONICS; MORPHOLOGY; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; TEXTURES; THIN FILMS; VLSI CIRCUITS;

AUTOMATED CRYSTAL ORIENTATION MAPPING (ACOM); ELECTRON BACKSCATTERING DIFFRACTION (EBSD);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031676051     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (8)

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