Combined optical/electric simulation of CCD cell structures by means of the finite-difference time-domain method

IEEE Transactions on Electron Devices

Volumn 47, Issue 5, 2000, Pages 931-938

  Korner T O ^a,b   Gull, Ronald ^a,c  

^a IEEE   (Switzerland)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

^c BridgeCo   (Switzerland)

Author keywords

Charge coupled devices; Finite difference methods; Maxwell equations; Optical propagation; Semiconductor device modeling; Simulation

Indexed keywords

EID: 0007999495     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.841223     Document Type: Article

References (27)

1. T. O. Körner, "Combined optical and electric simulation of metal-semiconductor-metal photodetectors," Proc. Inst. Elect. Eng, Optoelect., vol. 147, pp. 89-95, Apr. 2000, to be published.
2. T. O. Körner et al., "Combined opto-electronic simulation of CCD cell structures by means of finite-difference time-domain method," in Proc. Sixth Int. Workshop on Computational Electronics, Osaka, Japan, 1998, pp. 67-70.
3. T. Satoh et al., "Optical limitations to cell size reduction in it-ccd image sensors," IEEE Trans. Electron Devices, vol. 44, pp. 1599-1603, Oct. 1997.
4. H. Mutoh, "Simulation for 3-D optical and electrical analysis of CCD," IEEE Trans. Electron Devices, vol. 44, pp. 1604-1610, Oct. 1997.
5. J. T. Sheridan and T. O. Körner, "Imaging periodic surface relief structures,"/ Microscopy, vol. 177, pp. 95-107, Feb. 1995.
6. T. O. Körner, J. T. Sheridan, and J. Schwider, "Interferometric resolution examined by means of electromagnetic theory," / Opt. Soc. Amer. A, vol. 12, pp. 752-760, Apr. 1995.
7. A. Taflove, Computational Electrodynamics-The Finite-Difference-Time-Domain Method. Boston, MA: Artech House, 1995.
8. T. O. Körner, Rigorous Simulation of Light Propagation in Semiconductor Devices, W. Fichtner, W. Guggenbühl, H. Melchior, and G. S. Moschytz, Eds. Konstanz, Germany: Hartung-Gorre Verlag, 1999, vol. 81, Series in Microelectronics.
9. A. Mekis et al., "High transmission through sharp bends in photonic crystal waveguides," Phys. Rev. Lett., vol. 77, pp. 3787-3790, Oct. 1996.
10. J. Yamauchi, H. Kanbara, and H. Nakano, "Analysis of optical waveguides with high-eflection coatings using the FD-TD method," IEEE Photon. Technol. Lett., vol. 10, pp. 111-113, Jan. 1998.
11. L. Thode, G. Csanak, R. Hotchkiss, C. Snell, and M. Campbell, "Time-dependent model for vertical-cavity surface-emitting laser," in Proc. SPIE, vol. 2399, San Jose, CA, Feb. 1995, pp. 348-359.
12. B. Witzigmann, P. Regli, and W. Fichtner, "Rigorous electromagnetic simulation of liquid crystal displays," J. Opt. Soc. Amer. A, vol. 15, pp. 753-757, 1998.
13. L. H. Bomholt, P. Regli, T. O. Körner, and W. Fichtner, "Combination of device simulation with computational electromagnetics," in Proc. 4th Eur. Conf. Radiations and their Effects on Circuits and Systems, Cannes, France, 1997, pp. 189-197.
14. V. S. Vavilov, "On photoionization by fast electrons in germanium and silicon,"/ Phys Chem. Solids, vol. 8, pp. 223-226, 1959.
15. A. C. Cangellaris and R. Lee, "On the accuracy of numerical wave simulations based on finite methods," / Electromagn. Waves Applicat., vol. 6, pp. 1635-1653, 1992.
16. ISE Integrated Syst. Eng. AG, "ISE TCAD Manuals", Zürich, Switzerland.
17. G. Masetti, M. Severi, and S. Solmi, "Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon," IEEE Trans. Electron Devices, vol. ED-30, pp. 764-769, 1983.
18. C. Lombard!, S. Manzini, A. Saporito, and M. Vanzi, "A physically based mobility model for numerical simulation of nonplanar devices," IEEE Trans. Comput. Aided Design, vol. 7, pp. 1164-1171, Nov. 1988.
19. J. G. Possum and D. S. Lee, "A physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon," Solid-State Electron., vol. 25, no. 8, pp. 741-747, 1982.
20. M. A. Green, "Intrinsic concentration, effective densities of states, and effective mass in silicon," J. Appl. Phys., vol. 67, no. 6, pp. 2944-2954, 1990.
21. J. W. Slotboom and H. C. DeGraff, "Bandgap narrowing in silicon bipolar transistors," IEEE Trans. Electron Devices, vol. ED-24, pp. 1123-1125, 1977.
22. J. W. Slotboom, "The pn-product in silicon," Sotid-State Electron., vol. 20, pp. 279-283, 1977.
23. B. Richards and E. Wolf, "Electromagnetic diffraction in optical systems-II: Structure of the image field in an aplanatic system," P roc. R. Soc. A, vol. 253, pp. 258-379, 1959.
24. W.-C. Liau and M. W. Kowarz, "Vector diffraction from subwavelength optical disk structures: Two-dimensional modeling of near-field profiles, far-field intensities and detector signals from a DVD," Appl. Opt., vol. 38, pp. 3787-3797, 1999.
25. J. A. Roden et al, "Time-domain analysis of periodic structures at oblique incidence: Orthogonal and nonorthogonal FDTD implementations," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 420-427, Apr. 1998.
26. M. Pfeiffer, T. O. Körner, and W. Fichtner, "Finite-difference simulation of the propagation of obliquely incident light in spatially periodic structures," Opt. Lett., 1999, submitted for publication.
27. D. E. Aspnes, "Optical functions," in Properties of Silicon, émis DatareviewSer.: Inspec, 1988, pp. 59-80.