Simulation for 3-D Optical and Electrical Analysis of CCD

IEEE Transactions on Electron Devices

Volumn 44, Issue 10, 1997, Pages 1604-1610

  Mutoh, Hideki ^a  

^a Link Research Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; FERMI LEVEL; IMAGE SENSORS; OPTICAL PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SIMULATORS; THREE DIMENSIONAL;

INTERLINE TRANSFER CHARGE COUPLED DEVICES; SPECTRA SIMULATOR; TOCCATA SIMULATOR;

CHARGE COUPLED DEVICES;

EID: 0031246927     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.628811     Document Type: Article

References (7)

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2. K. Ishikawa M. Hamasaki T. Suzuki H. Kambe Y. Kagawa K. Miyata and K. YonemotoIT CCD imaging sensor with variable speed electronic shutterin Proc. SPIE Mar. 1989 vol. 1107.
3. K. Yonemoto et al. A 2 million pixel FIT-CCD image sensor for HDTV camera systemin ISSCC Dig. Tech. Papers vol. 38 pp. 214-215 and 299 Feb. 1990.
4. S. Selberherr Analysis and Simulation of Semiconductor Devices. Berlin Germany: Springer-Verlag 1984 pp. 208-212 1984.
5. D. S. KershavThe incomplete Cholesky conjugate gradient method for the iterative solution of systems of linear equationsJ. Comp. Phys. vol. 26 pp. 43-65 1978.
6. R. Dang Process and Device Simulation Technology. Tokyo Japan: Sangyo-tosho 1988 pp. 122-123.
7. F. A. Jenkins and H. E. White Fundamentals of Optics 4th ed. New York: McGraw-Hill 1976 pp. 523-526.