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Journal of the Korean Physical Society

Volumn 33, Issue 6, 1998, Pages 736-740

Growth and properties of freestanding GaN substrates by HVPE using an AIN buffer layer deposited on Si

(3) Kim, S T a Chung, S H b Moon, D C b

a Daejon National University of Technology (South Korea)

b Kwangwoon University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007325186 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (2)

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