Electrical isolation of a silicon δ-doped layer in GaAs by ion irradiation

Applied Physics Letters

Volumn 75, Issue 13, 1999, Pages 1917-1919

  Danilov, I ^a,c   De Souza, J P ^a   Boudinov, H ^a   Murel, A V ^b   Daniltsev, V M ^b   Shashkin, V I ^b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^c UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007162643     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124870     Document Type: Article

References (10)

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