Interface states and deep-level centers in silicon-on-insulator structures

Semiconductors

Volumn 35, Issue 8, 2001, Pages 912-917

  Antonova, I V ^a   Stano, J ^b   Nikolaev, D V ^a   Naumova, O V ^a   Popov, V P ^a   Skuratov, V A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007161511     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1393026     Document Type: Article

References (20)

1. M. Bruel, Electron. Lett. 31, 1201 (1995).
2. Y. A. Li and R. W. Bower, Jpn. J. Appl. Phys. 39, 275 (2000).
3. V. P. Popov, I. V. Antonova, V. F. Stas, L. V. Mironova, E. P. Neustroev, A. K. Gutakovskii, A. A. Franzusov, and G. N. Feofanov, in Perspectives, Science and Technologies for Novel Silicon-on-lnsulator Devices, Ed. by P. L. F. Hemment et al. (Kluwer, Dordrecht, 2000), p. 47.
4. E. V. Astrova, V. A. Kozlov, A. A. Lebedev, and V. B. Voronkov, Solid State Phenom. 69/70, 539 (1999).
5. S. Cristoloveanu and S. S. Li, Electrical Characterization of Silicon-on-Insulator Materials and Devices (Kluwer, Dordrecht, 1995).
6. I. V. Antonova, V. F. Stas', V. P. Popov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1095 (2000) Semiconductors 34, 1054 (2000)].
7. I. V. Antonova, V. F. Stas', V. P. Popov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1095 (2000) [Semiconductors 34, 1054 (2000)].
8. J. W. Farmer, C. D. Lamp, and J. M. Meese, Appl. Phys. Lett. 41, 1063 (1982).
9. K. Nagai, T. Sekigawa, and Y. Hayashi, Solid-State Electron. 28, 789 (1985).
10. T. Katsube, K. Kakimoto, and T. Ikoma, J. Appl. Phys. 52, 3504 (1981).
11. K. Hofmann and M. Schulz, J. Electrochem. Soc. 132, 2201 (1985).
12. A. A. Lebedev and W. Ecke, Fiz. Tekh. Poluprovodn. (Leningrad) 19, 1087 (1985) Sov. Phys. Semicond. 19, 667 (1985)].
13. A. A. Lebedev and W. Ecke, Fiz. Tekh. Poluprovodn. (Leningrad) 19, 1087 (1985) [Sov. Phys. Semicond. 19, 667 (1985)].
14. L. C. Kimerling, in Point and Extended Defects in Semiconductors, Ed. by G. Benedek, A. Cavallini, and W. Schroter (Plenum, New York, 1988); NATO ASI Ser., Ser. B 202 (1989).
15. L. C. Kimerling, in Point and Extended Defects in Semiconductors, Ed. by G. Benedek, A. Cavallini, and W. Schroter (Plenum, New York, 1988); NATO ASI Ser., Ser. B 202 (1989).
16. N. A. Yarykin, E. B. Yakimov, S. V. Koveshnikov, and O. V. Feklisova, in Papers Presented at Fifth International Conference on Properties and Structure of Dislocations in Semiconductors, Moscow, 1986, p. 209.
17. I. V. Antonova, G. A. Kachurin, I. E. Tyschenko, and S. S. Shaǐmeev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 2017 (1996) Semiconductors 30, 1051 (1996)].
18. I. V. Antonova, G. A. Kachurin, I. E. Tyschenko, and S. S. Shaǐmeev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 2017 (1996) [Semiconductors 30, 1051 (1996)].
19. H. S. Kang, C. G. Ahn, B. K. Kang, and Y. K. Kwon, J. Electrochem. Soc. 145, 3581 (1998).
20. P. K. McLarty, J. W. Cole, K. F. Galloway, and D. E. Ioannou, Appl. Phys. Lett. 51, 1078 (1987).