Atomic nitrogen doping in p-ZnSe molecular beam epitaxial growth with almost 100% activation ratio

Applied Physics Letters

Volumn 71, Issue 8, 1997, Pages 1077-1079

  Kimura, K ^a,c,d   Miwa, S ^a,b,e   Jin, C G ^a,f   Kuo, L H ^a,g,h   Yasuda, T ^a,f   Ohtake, A ^a,g   Tanaka, K ^a,f   Yao, T ^a,i   Kobayashi, H ^b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b SONY CORPORATION   (Japan)

^c Angstrom Technology Partnership   (Japan)

^d Sumitomo Electric   (Japan)

^e NATL INST FOR ADV INTERDISC RES   (Japan)

^f Joint Research Centre for Atom Technology   (Japan)

^g NAIR ^*

^h Super Epitaxial Products Inc   (Colombia)

ⁱ TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000868810     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119733     Document Type: Article

References (9)

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