High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1-xGex Schottky junctions

Applied Physics Letters

Volumn 76, Issue 25, 2000, Pages 3750-3752

  Mamor, M ^a,b   Ouacha, H ^b   Willander, M ^b   Auret, F D ^c   Goodman, S A ^c   Ouacha, A ^d   Sveinbjornsson E ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c UNIVERSITY OF PRETORIA   (South Africa)

^d SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006823928     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126771     Document Type: Article

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