Lattice Monte Carlo simulations as link between ab-initio calculations and macroscopic behavior of dopants and defects in silicon

Journal of Computer-Aided Materials Design

Volumn 5, Issue 1, 1998, Pages 81-88

  Bunea, Marius M ^a   Dunham, Scott T ^b  

^a Boston University   (United States)

^b Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; BINDING ENERGY; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); MONTE CARLO METHODS; PHOSPHORUS;

LATTICE MONTE CARLO (LMC) METHOD;

SILICON;

EID: 0032275228     PISSN: 09281045     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008689130758     Document Type: Article

References (10)

1. Pankratov, O., Huang, H., de la Rubia, T.D. and Mailhiot, C., Phys. Rev., B56 (1997) 13172.
2. Nelson, J.S., Schultz, P.A. and Wright, A.F., Appl. Phys. Lett., 73 (1998) 247.
3. Ramamoorthy, M. and Pantelides, S.T., Phys. Rev. Lett., 76 (1996) 4753.
4. Dunham, S.T. and Wu, C.D., J. Appl. Phys., 78 (1995) 2362.
5. Dunham, S.T. and Wu, C.D., In Ryssel, H. and Pichler, P. (Eds.) Simulation of Semiconductor Devices and Processes 6, Springer, Vienna, 1995, p. 476.
6. Hu, S.M., Phys. Stat. Solidi, B60 (1973) 595.
7. Larsen, A.N., Larsen, K.K. and Andersen, P.E., J. Appl. Phys., 73 (1993) 691.
8. Fair, R.B. and Weber, G.R., J. Appl. Phys., 44 (1973) 273.
9. Maser, K., Exp. Tech. Phys., 34 (1986) 213.
10. See List, S., Pichler, P. and Ryssel, H., 1996 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD '96, 27-8, p. 184 and references therein.