Formation of buried two-dimensional electron gas in GaAs by Si ion doping using MBE-FIB combined system

Materials Research Society Symposium - Proceedings

Volumn 396, Issue , 1996, Pages 701-705

  Yanagisawa, J ^a   Nakayama, H ^a   Wakaya, F ^a   Yuba, Y ^a   Gamo, K ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FABRICATION; GASES; ION BEAMS; ION IMPLANTATION; IONS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DOPING;

BURIED TWO DIMENSIONAL ELECTRON GAS; FOCUSED ION BEAMS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029710421     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)