Study of SiO2-Si interfaces by photocurrent measurements

Journal of Non-Crystalline Solids

Volumn 216, Issue , 1997, Pages 88-94

  Polignano, M L ^a   Ferroni, G ^a   Sabbadini, A ^a   Valentini, G ^a   Queirolo, G ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENT MEASUREMENT; NITROGEN OXIDES; OXIDATION; PHOTOELECTRICITY; SILICA; SILICON; SURFACE CLEANING; SURFACE PHENOMENA;

ELYMAT TECHNIQUE; PHOTOCURRENT MEASUREMENTS; SURFACE RECOMBINATION;

INTERFACES (MATERIALS);

EID: 0031207289     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(97)00120-8     Document Type: Article

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