Impact of GaN buffer growth conditions on photoluminescence and X-ray diffraction characteristics of MOVPE grown bulk GaN

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 219-222

  Eisenbach, A ^a   Pavlidis, D ^a   Philippe, A ^b   Bru Chevallier, C ^b   Dubois, C ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; EXCITONS; FULL WIDTH AT HALF MAXIMUM; III-V SEMICONDUCTORS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SILICON COMPOUNDS; TEMPERATURE; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION;

EXCITON EMISSION; INTEGRATED INTENSITIES; LOW TEMPERATURES; METAL-ORGANIC VAPOR PHASE EPITAXY; NEAR BAND EDGE EMISSIONS; OPTICAL LAYERS; PHOTOREFLECTANCE MEASUREMENTS; TEMPERATURE RAMPING;

GALLIUM NITRIDE;

EID: 3242770184     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711620     Document Type: Conference Paper

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