XPS study of laser-assisted etching of InP in a chlorine atmosphere

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2991, Issue , 1997, Pages 66-75

  Wrobel, Jerzy M ^a   Moffitt, Christopher E ^a   Wieliczka, David M ^a   Dubowski, Jan J ^b  

^a UNIVERSITY OF MISSOURI KANSAS CITY   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Dry etching ablation; InP; Laser processing; XPS

Indexed keywords

ABLATION; CHEMICAL COMPOUNDS; CHEMICAL REACTIONS; CHLORINE; CHLORINE COMPOUNDS; ETCHING; EXCIMER LASERS; GAS LASERS; HELIUM; INERT GASES; IRRADIATION; LASERS; PHOTOELECTRON SPECTROSCOPY; PLASMA ETCHING; PULSED LASER APPLICATIONS; ULTRASHORT PULSES; X RAY PHOTOELECTRON SPECTROSCOPY;

ABLATION THRESHOLDS; DRY ETCHING ABLATION; FLUENCE; INP; INP WAFERS; LASER IRRADIATIONS; LASER PROCESSING; LOW PRESSURE (LP); REACTION PRODUCTS; ROOM-TEMPERATURE (RT); XECL EXCIMER LASERS; XPS;

DRY ETCHING;

EID: 0005398883     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.273743     Document Type: Conference Paper

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