XPS study of laser annealed ion implanted InP

Materials Science Forum

Volumn 207-209, Issue PART 2, 1996, Pages 741-744

  Krastev, V ^a   Marinova, T ^a   Kalitzova, M ^b   Vitali, G ^c   Pizzuto, C ^c  

^a INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Bulgaria)

^b BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^c SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

InP; Ion Implantation; Laser Annealing; Stoichiometry; XPS

Indexed keywords

ANNEALING; BINDING ENERGY; CLEANING; COMPOSITION; DEPOSITION; ETCHING; ION IMPLANTATION; PULSED LASER APPLICATIONS; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

LOW POWER PULSED LASER ANNEALING; VIRGIN CRYSTALS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 5344268172     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.207-209.741     Document Type: Article

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