Patterned, photon-driven cryoetching of GaAs and AlGaAs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 13, Issue 1, 1995, Pages 43-54

  Shih, M C ^a   Freiler, M B ^a   Scarmozzino, R ^a   Osgood Jr , R M ^a  

^a Och Spine at New York Presbyterian Hospitals   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; AUGER ELECTRON SPECTROSCOPY; CHLORINE; CONTAMINATION; CRYOGENICS; DEFECTS; PHOTOCHEMICAL REACTIONS; PHOTOLUMINESCENCE; PHOTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

PHOTON DRIVEN CRYOETCHING; PHYSISORPTION; SCHOTTKY BARRIER MEASUREMENT;

ETCHING;

EID: 0029185195     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.587983     Document Type: Article

References (54)